| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 |
| filingDate |
2006-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef581cc2d96964b509a5f49aa0d23a98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a0596c2039c65a4d1abf83b8b940552 |
| publicationDate |
2008-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008053564-A |
| titleOfInvention |
Optical semiconductor device and manufacturing method thereof |
| abstract |
Disclosed is a metal-plated light reflection region in a light-emitting element arrangement portion of an optical semiconductor device, in which the metal plating can be prevented from being discolored, and the light reflection efficiency in a region near the light-emitting element can be prevented from decreasing. An optical semiconductor device and a manufacturing method thereof are provided. At least a part of a light emitting element disposition portion where a light emitting element is disposed is sealed with a light-transmitting sealing resin generated in the presence of a metal salt compound, and the at least part of the light emitting element disposing part is sealed. In the optical semiconductor device 100, the first metal coating layer 21 includes a first metal coating layer 21 containing a metal having a standard electrode potential smaller than that of the metal salt compound in a region adjacent to the sealing resin 14. An optical semiconductor device 100 in which a region facing the sealing resin 14 is coated with a second metal coating layer 22 containing a metal whose standard electrode potential is not smaller than that of the metal of the metal salt compound. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010038451-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011129658-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019082480-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014131075-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102265417-B
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101586023-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100063591-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5307824-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8981401-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012009542-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8852469-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101983435-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019082480-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010074184-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012039071-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012212850-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8338926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10066810-B2 |
| priorityDate |
2006-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |