http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008041856-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7e5956d7da84dc1160eea8100b8dfae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3001d481f676a5054c967f89dad77a5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e573d5ae82a4356cad5f187d3faa938a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e649eb7ff711e89e57f14fd6539e628 |
| publicationDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008041856-A |
| titleOfInvention | Dry etching method |
| abstract | Provided is a dry etching method capable of stably forming a low-resistance contact structure. The interlayer insulating film is selectively etched by a plasma of a gas containing a fluorocarbon gas to form a through hole. Next, a plasma process using oxygen gas plasma is performed on the substrate in which the through hole is formed in a state where a bias is applied to the substrate. Further, in succession to the oxygen plasma treatment, a plasma treatment using oxygen gas plasma is performed on the substrate in which the through holes are formed in a state where the application of the substrate bias is stopped. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114999898-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114999898-B |
| priorityDate | 2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.