http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008028001-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2006-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b55f75c08118449dccfb4da461439434 |
| publicationDate | 2008-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008028001-A |
| titleOfInvention | Thin film transistor substrate and manufacturing method thereof |
| abstract | A thin film transistor substrate having a layer structure that does not chemically damage a plastic substrate when a resist film used in the manufacturing process of the thin film transistor substrate using a plastic substrate as a substrate is removed, and a method for manufacturing the same are provided. To do. A step of preparing a plastic substrate 10 having an oxygen plasma-resistant inorganic layer 11 formed on the entire surface, a step of forming a semiconductor film on the inorganic layer 11, and a step of patterning a resist film on the semiconductor film The thin film transistor substrate is manufactured by a method in which the resist film removing step is performed by a plasma ashing method. At this time, the inorganic layer is selected from any one selected from the group consisting of chromium, titanium, aluminum, silicon, chromium oxide, titanium oxide, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon oxide, silicon nitride, and silicon oxynitride. It is preferable to become. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011040440-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102576735-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011097007-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9024312-B2 |
| priorityDate | 2006-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.