| abstract |
It is excellent in corrosion resistance to halogen-based corrosive gas and its plasma, can suppress generation of particles and dust, and can be suitably used as a member for a semiconductor / liquid crystal manufacturing apparatus, particularly a plasma processing apparatus. Provided is a yttria ceramic sintered body. Tungsten or tungsten oxide having an average particle size D 50 of 2 μm or less is dispersed in an amount of 5% by weight to 50% by weight with respect to yttria, and the volume resistivity at 20 to 400 ° C. is 10 6 Ω · cm to 10%. Halogen plasma treatment with less than 13 Ω · cm, open porosity of 0.2% or less, and surface roughness Ra of the portion in direct contact with halogenated corrosive gas or plasma thereof is 1 μm or less A yttria ceramic sintered body having a surface roughness Ra of more than 1 μm and less than 3 μm at the portion where the reaction product is deposited and deposited is used. [Selection figure] None |