http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007516622-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
filingDate 2004-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007516622-A
titleOfInvention Selectivity control method in plasma processing system
abstract A method for etching a function through a predetermined layer on a semiconductor substrate in a plasma processing system. The method includes placing a substrate in a plasma processing chamber of the plasma processing system. The method also includes pouring an etchant mixture into the plasma processing chamber, the etchant mixture being configured to etch a predetermined layer. The method further includes striking a plasma from the etchant source gas. The method further includes etching the function at least partially through a predetermined layer while applying a bias RF signal to the substrate. The bias RF signal has a bias RF frequency in the range of about 27 MHz to about 75 MHz and a bias RF power component, the bias RF power component being pre-determined to etch the second layer of the substrate. It is configured to etch with an etch selectivity higher than the selected selectivity threshold, or the function is configured to etch according to predetermined etch rate and etch profile parameters at a bias RF frequency.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015216384-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085288-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9691643-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012069921-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012104382-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4714166-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013149915-A
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Total number of triples: 29.