http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007516622-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate | 2004-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007516622-A |
titleOfInvention | Selectivity control method in plasma processing system |
abstract | A method for etching a function through a predetermined layer on a semiconductor substrate in a plasma processing system. The method includes placing a substrate in a plasma processing chamber of the plasma processing system. The method also includes pouring an etchant mixture into the plasma processing chamber, the etchant mixture being configured to etch a predetermined layer. The method further includes striking a plasma from the etchant source gas. The method further includes etching the function at least partially through a predetermined layer while applying a bias RF signal to the substrate. The bias RF signal has a bias RF frequency in the range of about 27 MHz to about 75 MHz and a bias RF power component, the bias RF power component being pre-determined to etch the second layer of the substrate. It is configured to etch with an etch selectivity higher than the selected selectivity threshold, or the function is configured to etch according to predetermined etch rate and etch profile parameters at a bias RF frequency. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015216384-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085288-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9691643-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012069921-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012104382-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4714166-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013149915-A |
priorityDate | 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.