| abstract |
The present invention promotes nitrogen incorporation (eg, nitridation) into a high-k dielectric film using a low temperature process. Furthermore, the present invention provides an in-situ method, i.e., the formation of a high-k dielectric film and the nitridation of the film are performed in the same process chamber during film deposition as opposed to conventional post-processing techniques. I will provide a. In another aspect, a method for depositing a multilayer material for use as a gate dielectric layer in a semiconductor device is provided. [Selection] Figure 1 |