http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007514327-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
filingDate | 2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007514327-A |
titleOfInvention | Method to prevent damage of porous low dielectric constant materials during resist stripping |
abstract | Damage to a porous low dielectric constant material during resist stripping is prevented. A method of forming a shape in a porous low dielectric constant layer is provided. First, a porous low dielectric constant layer is disposed on a substrate. A patterned photoresist mask is then disposed on the porous low dielectric constant layer. The shape is then etched into the porous low dielectric constant layer. After etching the shape, a protective layer is grown on the shape. Then, the patterned photoresist mask is peeled off so that a part of the protective layer is removed, and the protective wall formed of the protective layer is left in the shape. [Selection] Figure 1 |
priorityDate | 2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.