http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007512549-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F- http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2004-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007512549-A |
| titleOfInvention | Silicon-containing resist system with low activation energy |
| abstract | PROBLEM TO BE SOLVED: To provide an improved silsesquioxane polymer structure useful for a resist composition and a photolithography process having improved transparency at a wavelength of 193 nm or less and minimizing image blurring. . The present invention provides a silsesquioxane polymer and a resist composition containing such a silsesquioxane polymer, and at least a part of the silsesquioxane polymer is fluorinated. A dissolution-inhibiting pendant that has a moiety and at least a portion of the silsesquioxane polymer has low activation energy for an acid-catalyzed cleavage reaction, minimizing or avoiding the presence of high optical density moieties Has an acid labile moiety. The polymers of the present invention also have pendant polar moieties that promote alkaline dissolution of the resist in aqueous alkaline solutions. The polymers of the present invention are particularly useful in positive resist compositions. The present invention includes a method of using such a resist composition in forming a patterned structure on a substrate, particularly a multi-layer (eg, bi-layer) photolithography method, which includes wavelengths such as 193 nm and 157 nm. High-resolution images. [Selection figure] None |
| priorityDate | 2003-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.