| abstract |
[PROBLEMS] To provide 1 nm band to 30 nm band or 11 as exposure light. When a resist pattern is formed using exposure light having a wavelength in the range of 0 nm to 180 nm, a resist pattern having a favorable pattern shape can be obtained with almost no scum. SOLUTION: The pattern forming material is a siloxane compound represented by the following general formula (where R 1 is the same or different and is an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound or Which is an aromatic compound). Embedded image |