| abstract |
A method for etching a high-k dielectric layer on a substrate in a plasma processing system has been described. The high k dielectric layer, for example, can have a HfO 2. The method includes raising the substrate temperature above 200 ° C. (ie, typically on the order of 400 ° C.), introducing a process gas having a halogen-containing gas, and the process gas. And igniting the plasma and exposing the substrate to the plasma. The process gas may further include a reducing gas in order to improve the etching rate of HfO 2 with respect to Si and SiO 2 . |