| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_099c88e0f74d04a297ad59c495a8afc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c299d30676e4f43c16856bdb5bf58d |
| publicationDate |
2007-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007324186-A |
| titleOfInvention |
Plasma processing equipment |
| abstract |
Provided is a plasma processing apparatus capable of finely processing a sample to be processed stably for a long period of time and considering the uniformity of an etching rate. In a plasma processing apparatus that includes a susceptor 236 that protects a holding stage 209 disposed in a processing chamber 200 and that generates plasma and processes a wafer placed on the holding stage, the susceptor is at least a wafer. The surface located immediately below the edge or the surface in contact with the plasma is coated with a plasma resistant material containing no oxygen, such as a rare earth element fluoride such as YF3, or a mixture thereof. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012221979-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I563563-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010045200-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012227278-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8896210-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012165551-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2012165551-A1 |
| priorityDate |
2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |