| abstract |
A resist protective film material suitable for immersion exposure and a pattern forming method. A resist protective film material using an ether compound having 8 to 12 carbon atoms as a solvent makes it water-insoluble and soluble in an alkaline aqueous solution (alkaline developer). Further, it is possible to perform good immersion lithography that does not mix with the resist film, and it is possible to simultaneously perform development of the resist film and removal of the protective film at the same time during alkali development. [Selection figure] None |