http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007281019-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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filingDate 2006-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c90a19e84e89c6b700e8600fdb39f03c
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publicationDate 2007-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007281019-A
titleOfInvention Etching apparatus and etching method
abstract An etching apparatus for accurately etching a magnetic material and an etching method for reliably detecting the end point of etching of the magnetic material are provided. In a helicon wave plasma etching apparatus, a processing chamber for performing a plasma etching process on a wafer is provided, and a stage portion is disposed in the processing chamber. The stage unit 3 is provided with a magnetic detection unit 13 for detecting magnetism, and the magnetic detection unit 13 is connected to a control unit 14. A bell jar 8 is provided above the processing chamber 2, and a helicon coil 9 and a magnetic field coil 11 are disposed on the outer periphery thereof. An RF power supply 10 for supplying predetermined power is connected to the helicon coil 9. [Selection] Figure 1
priorityDate 2006-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.