| abstract |
A second stage slurry having a high barrier material removal rate, excellent selectivity to interconnect metal, and controlled removal of TEOS, CDO and copper removal rates. The polishing liquid serves to remove the barrier material in the presence of at least one interconnecting non-ferrous metal with limited insulator erosion. The solution is formed from 0 to 20 wt% oxidizer, at least 0.001 wt% inhibitor to reduce the removal rate of the interconnecting non-ferrous metal, and from 1 ppm to 4 formed by a quaternary ammonium salt. 1% by weight to 4% by weight of an anionic surfactant (having 4 to 25 carbon atoms, and the total amount of the anionic surfactant added to the ammonium cation salt) The number of carbon atoms is 6 to 40 carbon atoms), 0 to 50% by weight of abrasive grains and the remaining amount of water, and the solution has a pH of less than 7. [Selection figure] None |