| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02C20-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2006-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07a198c09129eec38d43ed0e0ad22559
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64faee4715085db0f11469df9872af05 |
| publicationDate |
2007-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007250985-A |
| titleOfInvention |
Plasma etching method |
| abstract |
A high performance plasma etching method required for processing a MEMS device or a semiconductor device is provided. The plasma etching method of the present invention is a processing gas 1 containing fluorine gas (F 2 ). Is a plasma etching method in which plasma 5 is generated by alternately supplying a high frequency electric field and stopping application, and the substrate 9 is irradiated with the plasma 5 to perform substrate processing. (1) The time for applying the high-frequency electric field is 20 to 70 μs and the time for stopping the application is 20 to 100 μs, or (2) the output of the high-frequency electric field applied to the substrate is It is 60 W or more. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017017331-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011098409-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011510501-A |
| priorityDate |
2006-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |