| abstract |
Barrier polishing of a semiconductor device in which polishing proceeds at a sufficient polishing rate in a step of planarizing a surface to be polished by chemical mechanical polishing, dishing can be suppressed, and cost can be sufficiently suppressed even in actual use. A polishing liquid and a polishing method suitable for the above are provided. The present invention includes (a) an organic acid, (b) colloidal silica particles, (c) a corrosion inhibitor, and (d) a dodecylbenzenesulfonate salt as a surfactant and no oxidizer. A polishing liquid for the barrier. [Selection figure] None |