http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007184482-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c02bb431eedd6890ee8a87744945bc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fec89e38aee859933d27c1aeebd59b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05c5883110eeaaf4f035d846f31e7b3f |
| publicationDate | 2007-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007184482-A |
| titleOfInvention | Group III nitride semiconductor processing method |
| abstract | To provide a processing method capable of processing a group III nitride semiconductor at high speed without damaging the surface without using a highly corrosive chlorine-based gas such as Cl 2 or BCl 3 . In an atmosphere of a hydrogen mixed gas containing a rare gas as a carrier gas, a hydrogen plasma is generated between an application electrode to which high-frequency power is applied and a surface of a group III nitride semiconductor, and Provided is a method for processing a group III nitride semiconductor in which the surface of the group III nitride semiconductor 6 is etched by a hydrogen plasma 10. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103200807-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103200807-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108701590-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018532258-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012059866-A |
| priorityDate | 2006-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.