http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007142174-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
filingDate 2005-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05c5883110eeaaf4f035d846f31e7b3f
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publicationDate 2007-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007142174-A
titleOfInvention Group III nitride semiconductor processing method
abstract Provided is a method for processing a group III nitride semiconductor that can be processed uniformly and at high speed over the entire surface of the group III nitride semiconductor. A cylindrical rotary electrode 2 and a substrate stage 4 are arranged at an interval in a chlorine-containing gas atmosphere under atmospheric pressure or near atmospheric pressure. Plasma 10 is generated between the cylindrical rotary electrode 2 and the substrate stage 4 by supplying high-frequency power to the cylindrical rotary electrode 2. A region where the distribution of the surface processing amount in the entire region of the plasma 10 generated between the cylindrical rotary electrode 2 and the substrate stage 4 is fixed to the substrate stage 4 via the first substrate holder 11. The surface of the group III nitride semiconductor 6 is processed by bringing it into contact with the surface of the group III nitride semiconductor 6. [Selection] Figure 1A
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