| abstract |
A uniform Ti silicide film having a flat (flat) interface with a base can be formed, whereby a contact with lower resistance can be formed. A substrate processing apparatus includes a first common transfer chamber that is commonly connected to processing chambers and a second common transfer chamber that is commonly connected to processing chambers. Each of the processing chambers 104E, 104F, 104A, 104C, and 104B is a COR processing chamber that generates a product by chemically reacting a foreign substance including a natural oxide film on the Si wafer with a gas component, and is generated on the Si wafer. A PHT process chamber for removing products by heat treatment, a Ti film deposition process chamber for depositing a Ti film on the Si surface of a Si wafer, and forming a Ti silicide film by causing a silicidation reaction between the Ti film and the substrate And a TiN film forming chamber for forming a TiN film on the Ti silicide film. [Selection] Figure 13 |