http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007092143-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6506300a23c7893d30a5e4208001b645 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P10-20 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B3-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25C1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B58-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B3-04 |
filingDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77cd1ae8f32bc4c0f92d9979b27c80db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8aed5d40495764fbfee54750ea17e208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12d1a2622d1e23e6f15646516a03a52a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2065e743c4d38e599630ebca036b157d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab2934b2c398aead5404d9cba41bcbf8 |
publicationDate | 2007-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007092143-A |
titleOfInvention | High purity indium metal and manufacturing method thereof |
abstract | PROBLEM TO BE SOLVED: To provide a method for producing high-purity indium metal having high purity, particularly tin (Sn) quality and lead (Pb) quality, and suitable as an electronic component material and an ITO target material. SOLUTION: An indium-containing acid solution containing 0.2 mg / L or more of cadmium (Cd) is adjusted to pH by adding an alkali, and an oxidation-reduction potential regulator is added to adjust the oxidation-reduction potential. A liquid treatment method characterized by adding an agent to precipitate and remove metal ions other than indium to obtain an electrolytic source solution, and a step of preparing the electrolytic source solution by the liquid treatment method This is a method for producing high-purity indium metal. A high-purity indium metal for electronic parts, wherein the content of tin (Sn) is less than 0.1 ppm by mass. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102925683-A |
priorityDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.