http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007086515-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f110e0e7102931afe7edfc0254e94e54 |
| publicationDate | 2007-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007086515-A |
| titleOfInvention | Resist composition and pattern forming method using the same |
| abstract | PROBLEM TO BE SOLVED: To provide a resist composition having a good line width roughness and a contact which can be suitably used in an ultra microlithography process such as manufacture of an ultra LSI or a high-capacity microchip and other photofabrication processes. It is an object of the present invention to provide a resist composition excellent in resolving power, defocus latitude, and exposure margin in forming a hole pattern. A resist composition containing a resin whose rate of dissolution in an alkaline developer is increased by the action of an acid having a specific repeating unit, and (B) a compound that generates an acid upon irradiation with actinic rays or radiation. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009294394-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009244352-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021140909-A1 |
| priorityDate | 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 346.