| abstract |
A semiconductor device capable of easily increasing the degree of freedom of wiring without causing a malfunction such as a short circuit, and capable of easily changing the wiring in a short time, a method of manufacturing the same, and a wire including the same A bonding chip size package (WBCSP) is provided. In the WBCSP of the present invention, a wiring pad 32 and a bump pad are formed on a silicon substrate, and a bump electrode 36 is formed on the bump pad via a post, and a copper electrode is formed on the silicon substrate. The redistribution layer 37 is provided with bonding wires 38 above the copper redistribution layer 37, and the copper redistribution layer 37 and the bonding wire 38 are connected to one bump electrode 36 and one pad 32. The two bump electrodes 36 are connected by bonding wires 38, respectively. [Selection] Figure 3 |