| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8646e94e981f7928cc58456bd20e402a |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 |
| filingDate |
2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e862ec62c94695806327345974538cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa146df086e022a3423f4f1c8f7ddb48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3600cf67aa8a07490e28e4c3efd01ac4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461a894792edc5d7061d8ce44528ff47 |
| publicationDate |
2007-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007077456-A |
| titleOfInvention |
Thin film forming equipment |
| abstract |
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus capable of forming a ZnO thin film having a resistivity reduced to such an extent that it can be used for a transparent electrode of a liquid crystal display. A Zn material as a film forming material is evaporated from an evaporation means 27, the evaporated Zn material is oxidized with a microwave oxygen plasma 25, a ZnO compound is deposited on a glass substrate 30 to form a thin film, and a thin film is further formed. The formed ZnO thin film is exposed to microwave hydrogen plasma to reduce the resistivity, and is a thin film forming apparatus capable of forming a conductive ZnO thin film. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1972831-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100928221-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013337603-A1 |
| priorityDate |
2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |