http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007073940-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c02bb431eedd6890ee8a87744945bc2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2006-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38e0733b6dd1128afe3ec615a0588e85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5f4a06c825a20477defd5c652c9f643 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05c5883110eeaaf4f035d846f31e7b3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fec89e38aee859933d27c1aeebd59b1 |
| publicationDate | 2007-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007073940-A |
| titleOfInvention | Group III nitride semiconductor processing method, group III nitride semiconductor light emitting device manufacturing method, group III nitride semiconductor light emitting device, group III nitride semiconductor laser device manufacturing method, and group III nitride semiconductor laser device |
| abstract | A processing method of a group III nitride semiconductor capable of processing a group III nitride semiconductor with high accuracy and high speed without damaging the surface. A plasma 13 is generated between a cylindrical rotary electrode 2 and a surface of a group III nitride semiconductor 6 in a chlorine-containing gas atmosphere under atmospheric pressure or a pressure near atmospheric pressure, and the plasma 13 is converted into III. The surface of the group III nitride semiconductor 6 is processed by bringing it into contact with the surface of the group nitride semiconductor 6. At this time, the group III nitride semiconductor 6 is heated by the heater 5 to a temperature of the boiling point of gallium chloride of 200 ° C. or higher. Further, a mixed gas of chlorine gas and rare gas is used as the chlorine-containing gas. [Selection] Figure 1A |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014045049-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008251893-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014193789-A |
| priorityDate | 2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.