http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006507667-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2003-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006507667-A |
| titleOfInvention | System and method for removing material |
| abstract | As described above, embodiments of the present invention provide for removal of process material crusts such as photoresist ion implanted from a process target. The halogen-free plasma is generated by using a hydrocarbon gas in combination with oxygen gas so that the crust is subjected to the plasma. Methane can be used as a hydrocarbon gas. This plasma may be used to remove the underlying native photoresist and residues associated with ion implantation. The plasma can also be generated by using a gas containing hydrogen, which may be pure hydrogen gas, in combination with oxygen gas. Several techniques are used that involve exposing a workpiece to a hydrogen / oxygen based plasma followed by a hydrocarbon / oxygen based plasma. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011243595-A |
| priorityDate | 2002-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.