| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2003-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006501495-A |
| titleOfInvention |
193 nm resist with improved post-exposure properties |
| abstract |
By using a resist composition containing an imaging polymer component consisting of an acid sensitive polymer having monomer units with pendant groups containing a distal acid labile moiety, using 193 nm radiation and / or possibly other radiation An acid-catalyzed positive resist composition is obtained that is imageable, developable to form a resist structure with improved development characteristics, and enables an improved etch-resistant resist structure. It was. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012518692-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140065190-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009069814-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102819191-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101583226-B1 |
| priorityDate |
2002-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |