| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2005-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9be1c72bb08dd419c410d18ec38e43c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce6f4fe4b8c9fbf158eeea393294e161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e274db00c0a48b9aaf9e4a5cd9d55d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfdadcf99b2fc0b24e55c48dd0ad49f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_128b001ab17806f8d2dedd6c8610ddb2 |
| publicationDate |
2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006351769-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which adhesion between an insulating material and a wiring material and characteristics such as mechanical strength are improved by using an insulating film of a borazine compound and a manufacturing method thereof. A first insulating layer embedded with a first conductor layer, an etching stopper layer formed on the first insulating layer, a second insulating layer formed on the etching stopper layer, and a second insulating layer A semiconductor device comprising: a third insulating layer formed on the insulating layer; and a second conductor layer embedded in a recess of the second insulating layer and the third insulating layer, The insulating layer and the third insulating layer are formed by chemical vapor deposition using a carbon-containing borazine compound as a raw material, and the carbon content of the third insulating layer is higher than the carbon content of the second insulating layer. A semiconductor device characterized by being small. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009081179-A |
| priorityDate |
2005-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |