| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2005-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e563d5424902dbceec74098b4e401a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8292925b14effb2844a8a333b5e1a92b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_635dcd00964e8c25a799952a88287e39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bca619574d410b78766e3fff08477737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d040e3f02c281e12a7390bc912e2e66e |
| publicationDate |
2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006310736-A |
| titleOfInvention |
Method for manufacturing gate insulating film and method for manufacturing semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To produce a high-quality gate insulating film capable of imparting excellent electrical characteristics to a semiconductor device even if it is thinned. A method of manufacturing a gate insulating film, which includes an oxidation process step of forming a silicon oxide film by applying an oxygen-containing plasma to silicon on a surface of an object to be processed in a processing chamber of a plasma processing apparatus. The processing temperature in the process is more than 600 ° C. and not more than 1000 ° C. The oxygen-containing plasma introduces an oxygen-containing processing gas containing at least a rare gas and an oxygen gas into the processing chamber, and enters the processing chamber via an antenna. A method for producing a gate insulating film, characterized by being a plasma of the oxygen-containing processing gas formed by introducing high frequency or microwave. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009070919-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013537716-A |
| priorityDate |
2005-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |