| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d57a3a2c98e2087f232bd2130cf73d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07c36b25151710a21117e3ae00c64f28 |
| publicationDate |
2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006303084-A |
| titleOfInvention |
Silicon carbide semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a SiC semiconductor device that uses a semiconductor substrate having SiC formed on the surface of the Si substrate and does not cause a voltage drop corresponding to a band offset between the Si substrate and SiC without removing the Si substrate. A band offset is substantially eliminated by interposing a conductive layer 11 made of metal between an N + type low resistance layer 3 made of SiC and an N + type Si substrate 1. To be able to. As a result, the SiC in which the voltage drop corresponding to the band offset between the N + type Si substrate 1 and the N type SiC layer 2 does not occur while using the semiconductor substrate in which the N + type SiC substrate 1 is not removed from the N type SiC layer 2. A semiconductor device can be obtained. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8890239-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012104568-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010219515-A |
| priorityDate |
2005-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |