http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006294671-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ef01e33058cf740cf2197991be97af1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6791448feef7a452fd09d7fba97b84c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bb761c13f77d74c855ad03a514a20ae |
| publicationDate | 2006-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006294671-A |
| titleOfInvention | Method for producing low dielectric constant silicon carbide film |
| abstract | A silicon carbide film having a lower dielectric constant than that of the prior art is produced by plasma CVD. A gas containing an organosilane of the general formula (1) is introduced into a chamber having at least one set of electrodes, and power density is 0.01 W / cm 2 or more and 0.25 W / cm 2 or less to the electrodes. A method for producing a silicon carbide film having a dielectric constant of less than 3.3, wherein a silicon carbide film is formed on a substrate surface in the chamber by applying a high frequency of SiCxHy (1) (In the formula, x is an integer of 8 or more, and y is an integer of 1 or more.) |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011181672-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101941232-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I669417-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180071747-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018117557-A1 |
| priorityDate | 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.