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filingDate 2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006278522-A
titleOfInvention Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
abstract PROBLEM TO BE SOLVED: To manufacture a semiconductor integrated circuit device with less pattern dependency of a polishing rate when polishing a surface to be polished of a silicon dioxide-based material layer, and can preferentially polish the convex portion while suppressing the polishing of the concave portion, Provided is a technique capable of highly planarizing a surface to be polished with an extremely small polishing amount. In manufacturing a semiconductor integrated circuit device, cerium oxide is used as a chemical mechanical polishing abrasive for polishing a polished surface when the polished surface is a polished surface of a silicon dioxide-based material layer. An abrasive containing particles, a water-soluble polyamine, and water is used. [Selection] Figure 1
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