http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006237435-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad3ff1bb451e1fbdcdedee37ba5b5c5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e99244733d13f643985dc158da00515 |
| publicationDate | 2006-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006237435-A |
| titleOfInvention | Group III nitride compound semiconductor laser manufacturing method |
| abstract | 【Task】 Provided is a method for manufacturing a Group III nitride compound semiconductor laser in which the ohmic characteristics of an electrode are improved by suppressing damage at the interface between the p-electrode and the p-type contact layer and the remaining mask material. [Solution] In the method of manufacturing a group III nitride compound semiconductor laser, a step of forming a plurality of semiconductor layers made of a group III nitride compound semiconductor on a substrate, and a surface of the semiconductor layer having a narrower width than the semiconductor layer. And a step of etching the semiconductor layer using the electrode as a mask to form a ridge portion. Since the surface of the electrode is made of a metal that is not easily affected by etching, the influence of the p-electrode due to plasma damage or etching gas corrosion is reduced. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112467518-A |
| priorityDate | 2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.