| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2005-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1092e47cdbf982c23df60bf477726b92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_040df34c5e5a476c5ad69cf3e92727db |
| publicationDate |
2006-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006216658-A |
| titleOfInvention |
Method for manufacturing thin film semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a method capable of producing a thin film semiconductor device having a controlled plane orientation and having a single-crystal crystal structure and thereby excellent electrical characteristics (semiconductor characteristics) such as mobility. SOLUTION: A step of forming a base film 2 on a substrate 1, a step of arranging a catalyst metal 3 for promoting crystallization of silicon on the base film 2 in a dot shape, a substrate 1 covering the catalyst metal 3 on the substrate 1 And forming a metal silicide 5 by reacting the amorphous silicon film 4 with the catalytic metal 3 and heating the amorphous silicon film 4 on which the metal silicide 5 is formed. Solid-phase growth to form solid-phase growth grains 6, and melt and crystallize amorphous silicon film 4 to form single-crystal silicon grains 7 having a predetermined plane orientation. Forming the seed crystal as a seed crystal. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101333796-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104299891-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9576797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100994236-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010134691-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010134691-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8367527-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012526379-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102414791-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633842-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016516286-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011109064-A |
| priorityDate |
2005-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |