http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004134533-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2002-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_040df34c5e5a476c5ad69cf3e92727db |
| publicationDate | 2004-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004134533-A |
| titleOfInvention | Semiconductor device manufacturing method, semiconductor device, electro-optical device, and electronic apparatus |
| abstract | Provided is a method for manufacturing a semiconductor device capable of forming a semiconductor element using a semiconductor film including crystal grains with controlled plane orientation. A crystallization promoting film forming step of forming a crystallization promoting film (11) made of a metal-containing substance and promoting the crystallization of a semiconductor film on a substrate (10), and a base insulating film on the substrate (10) A step of depositing a base insulating film for depositing (12) and forming a fine hole (13) in the base insulating film (12) and exposing the crystallization promoting film (11) at the bottom of the fine hole (13); A semiconductor film deposition step of depositing a semiconductor film (14) in the base insulating film (12) and the fine holes (13); and performing a heat treatment on the substrate (10) to form the fine holes (13) in the semiconductor film (14). A) a heat treatment step of crystallizing a region including the vicinity of the bottom in a solid state to obtain a crystal component-containing semiconductor film, and melting the semiconductor film (14) starting from the crystal component-containing semiconductor film in the micropores (13). Melt crystallization to obtain crystalline semiconductor film (18) by crystallization Including the extent, the. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006216658-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4734944-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7989326-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009295996-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7943929-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005354028-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4549842-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200085721-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102219343-B1 |
| priorityDate | 2002-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.