| abstract |
An object of the present invention is to obtain a method for recovering damage received by a silicon-based low dielectric constant film such as a SiOC film due to plasma treatment. A recovering agent made of a silicon compound or hydrocarbon is brought into contact with a damaged silicon-based low dielectric constant film in a liquid or gaseous state. It is preferable that the contact is performed under heating or the contact is performed in a plasma atmosphere. For example, SiH 4 , Si 2 H 6 , CH 4 , C 2 H 6 , C 3 H 8 are used as the recovery agent. [Selection figure] None |