http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006210474-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f37bc8280d9fab4985ae5b7b7fd7fc6a
classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
filingDate 2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43070c19823b247b62b558414202e567
publicationDate 2006-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006210474-A
titleOfInvention Manufacturing method of semiconductor laser device
abstract PROBLEM TO BE SOLVED: To provide a semiconductor laser device manufacturing method, particularly in a semiconductor laser device having a protective film on both end faces of a resonator, with little element deterioration due to COD, high output and high reliability irrespective of the film quality of the protective film. It is to be done. The resonator end faces 1a and 1b are subjected to plasma treatment under predetermined conditions, for example, with low ion energy and high ion current density, thereby causing contaminants and natural oxide layers on the resonator end faces 1a and 1b generated during cleavage. In addition, the resonator end faces 1a and 1b are modified so that oxidation is suppressed. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11075614-B2
priorityDate 2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.