http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006203237-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2006-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57de1be492adcf34a5d0d62962dc7846 |
| publicationDate | 2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006203237-A |
| titleOfInvention | Semiconductor device including insulated gate field effect transistor |
| abstract | PROBLEM TO BE SOLVED: To realize a semiconductor device including an insulated gate field effect transistor in which both a gate electrode of an N channel MISFET and a gate electrode of a P channel MISFET have an appropriate work function and a threshold voltage can be easily controlled. A semiconductor device including an insulated gate field effect transistor according to the present invention is formed in a first element region, and an N channel in which a region of the gate electrode film in contact with the gate insulating film is made of tungsten silicide. The MISFET is formed in the second element region, and the gate electrode film is made of tungsten silicide having the same constituent material as platinum silicide and tungsten silicide and having a silicon content smaller than that of the gate electrode film of the N-channel MISFET. It has a P-channel MISFET, and the work function of the gate electrode film of the N-channel MISFET is smaller than the work function of the gate electrode film of the P-channel MISFET. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160084139-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102282980-B1 |
| priorityDate | 2006-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.