http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006165421-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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filingDate 2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20b681d9984f162848ed273dc5289705
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publicationDate 2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006165421-A
titleOfInvention Nitride semiconductor laser device and manufacturing method thereof
abstract PROBLEM TO BE SOLVED: To form a ridge structure having a desired size and shape when etching a nitride semiconductor by using a dry etching apparatus, and to produce a nitride semiconductor laser element with good characteristics without variation in various characteristics. And it aims at providing the manufacturing method. The present invention relates to an atom / molecule composed of an element contained in an etching gas in an emission spectrum emitted from plasma generated in a reaction chamber of an etching apparatus, or an element contained in an etching gas and a nitride semiconductor. Etching can be accurately stopped at a desired position by detecting light of a specific wavelength emitted by molecules composed of elements constituting the thin film and observing temporal changes in the intensity of the light. [Selection] Figure 3
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011517070-A
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