| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2004-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13e2b365874a2fd043939b9c7a158785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e055945be30413e82f9653224091515 |
| publicationDate |
2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006165164-A |
| titleOfInvention |
Dry etching method and dry etching apparatus |
| abstract |
PROBLEM TO BE SOLVED: To suppress notches in dry etching of an object to be processed in which an etching target layer made of a silicon-based material is formed on an etching stop layer. A substrate includes a layer to be etched made of a silicon-based material on an etching stop layer. SF 6 / C 4 F 8 gas is introduced as an etching gas to generate plasma, and a portion exposed from the resist mask 23 of the etching target layer 22 is etched. A sidewall protective layer 24 made of a polymer is formed on the sidewalls of the grooves and holes. [Selection] Figure 3B |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9460935-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130091684-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012169312-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015032597-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009206130-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102070459-B1 |
| priorityDate |
2004-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |