http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006108622-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 |
| filingDate | 2005-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b007f5906bc3a65385b3ce1eccb1352 |
| publicationDate | 2006-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006108622-A |
| titleOfInvention | Thin layer transistor, active matrix display device using the same, and liquid crystal display device |
| abstract | PROBLEM TO BE SOLVED: To provide a thin layer transistor having excellent adhesion and conductivity with a substrate and having an easily formed electrode and realizing high resolution of the electrode, and electrical characteristics provided with the thin layer transistor The present invention provides a liquid crystal display device in which the conductivity of the driver input / output wiring of the active matrix display device and the driving LSI chip is improved and the wiring is formed with high resolution. SOLUTION: A substrate having a polymerization initiation site capable of initiating radical polymerization by photocleavage and a substrate binding site bonded to a surface is brought into contact with a radical polymerizable unsaturated compound to form a pattern. After applying energy and generating a patterned graft polymer on the substrate, a conductive layer formed by applying a conductive material to the graft polymer generation region is used as a gate electrode 110, and gate insulation is formed on the gate electrode 110. A thin layer transistor including a film 114, a semiconductor film 118, a source electrode 120, and a drain electrode 122 in this order. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006270085-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019169734-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7994503-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008260272-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010010549-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008106345-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714503-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11637130-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257847-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105914236-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011029629-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7300031-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018186299-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105914236-B |
| priorityDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 138.