| abstract |
PROBLEM TO BE SOLVED: To realize a semiconductor device excellent in high heat resistance, high thermal conductivity and high adhesion by adopting a lead-free bonding technique. A semiconductor device according to the present invention includes a lead particle-free metal fine particle layer, a metal particle-resin composite material, between a lead frame having a metal layer on the surface and a semiconductor element having a metal layer on the back surface. By using a die mount material having a three-layer structure of a layer or metal foil 14 and a metal fine particle layer 13, it is possible to achieve high thermal conductivity and high adhesion by metal diffusion bonding at each bonding interface. Is. [Selection] Figure 1 |