| abstract |
PROBLEM TO BE SOLVED: To produce a thin film transistor (TFT) having a small gate capacitance and suppressing a short channel effect. Further, the wiring resistance of the gate wiring is reduced, so that the circuit area can be reduced and the TFT can be driven at high speed. By making the gate electrode into two layers and making the width of the lower layer smaller than that of the upper layer, the overlapping area of the active layer made of the gate electrode and the semiconductor film is reduced. Accordingly, the gate capacitance can be reduced and the short channel effect can be suppressed, so that the TFT can be driven at a high speed. In addition, by forming the gate electrode and the wiring separately without being integrally formed, the circuit area constituted by the TFT can be reduced, which contributes to speeding up. [Selection] Figure 1 |