http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006013361-A

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filingDate 2004-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47d70a85d2e2f95fc29374a80b057dd5
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publicationDate 2006-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006013361-A
titleOfInvention Insulating film forming method and plasma film forming apparatus
abstract An insulating film forming method capable of obtaining an insulating film with little ion damage and good film thickness uniformity is provided. A vacuum vessel 2 having an electromagnetic wave incident surface F, a first gas jet port 42 provided in the vacuum vessel 2, and an electromagnetic wave incident surface F from the first gas jet port 42 into the vacuum vessel 2. The insulating film 101 is formed by the plasma film forming apparatus 1a having the second gas jet port 52 provided at a position far from the center. A step of supplying a first gas as a plasma generating gas into the vacuum vessel 2 from the first gas jetting port 42, and an organosilicon compound gas and an organometallic compound from the second gas jetting port 52 into the vacuum vessel 2 Supplying a second gas containing at least one of the gases and at least one of the oxygen gas and the dilution gas. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8809203-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190135430-A
priorityDate 2004-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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