http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005537683-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-30466 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2003-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005537683-A |
| titleOfInvention | Method and apparatus for endpoint detection in etching using an electron beam |
| abstract | A technique for detecting an end point during a semiconductor dry etching process is disclosed. The dry etching process of the present invention uses a combination of a reactive substance and an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection technique comprises monitoring the emission levels of secondary and backscattered electrons and the current in the sample. Depending on the weight given to each of these parameters, the end point is determined when the value of these parameters changes beyond a certain percentage with respect to the initial value. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008159568-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011530822-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9023666-B2 |
| priorityDate | 2002-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.