| abstract |
1 to 21% by weight of fluoride source, 20 to 55% by weight of organic amine, 0.5 to 40% by weight of nitrogen-containing component (eg nitrogen-containing carboxylic acid or imine), and 23 to 50% by weight of water And a semiconductor wafer cleaning composition comprising 0 to 21% by weight of a metal chelating agent. This formulation is useful for removing residues from a wafer after a resist plasma ashing process, such as inorganic residues from a semiconductor wafer containing a dense copper interconnect structure. |