http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005322708-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_158f76bc9c383ac988486428cf8eb47e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2004-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a9c005a933334ef251eed736703406 |
| publicationDate | 2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005322708-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | To provide a method for manufacturing a semiconductor device which can prevent occurrence of an interlayer insulating defect in a trench in a method for manufacturing a semiconductor device including a trench lateral MOSFET and a capacitor on the same semiconductor substrate. An insulated gate transistor region in which a gate electrode film is formed via an insulating film is formed on a sidewall of a trench formed in a semiconductor substrate, and an element isolation region is formed on the semiconductor substrate. In the method of manufacturing a semiconductor device including a capacitor region 14 composed of a first electrode film 10, a dielectric film 11, and a second electrode film 12 that are sequentially stacked, the second electrode film forming conductive film is formed on the surface of the semiconductor substrate. And a method of manufacturing a semiconductor device in which the second electrode film 12 is formed by forming a mask on the second electrode film formation region of the conductive film and performing isotropic etching after the film is formed on the inner surface of the trench. To do. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007208073-A |
| priorityDate | 2004-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.