| abstract |
A technique capable of improving the manufacturing yield of a semiconductor device having, for example, an IGBT as a semiconductor element. After wirings 17 and 18 are formed on the surface side of a semiconductor substrate 1, a support substrate 21 that covers the wirings 17 and 18 is pasted on the wirings 17 and 18, and a BG tape 22 is further formed on the support substrate 21. The semiconductor substrate 1 is ground from the back surface. Thereafter, the BG tape 22 is peeled off, and impurities are introduced into the back surface of the semiconductor substrate 1 by ion implantation. Subsequently, the support substrate 21 is peeled off, and the semiconductor substrate 1 is subjected to heat treatment. [Selection] Figure 14 |