| abstract |
[PROBLEMS] To provide an electrode structure and a semiconductor package of a semiconductor device realizing low resistance. SOLUTION: In an electrode structure of a MOS type high power semiconductor device 10, AL electrode layers 15, 17 formed on the upper surface of the semiconductor device 10 and connected to a gate or a source of a MOS transistor, respectively, and an AL electrode layer. 1 Metal plating layers 35 and 37 formed of a solderable metal material are provided on the surfaces of the metal electrode layers 15 and 17 and the lead terminals 54 and 53 of the package. The connection is made via the wire 104 and the Cu connection plate 55, respectively. |