http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005302899-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44b2ac87aeadb161b83426d9cf6c4bdc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9da885a169b1b02e884a3d7279fc983d |
| publicationDate | 2005-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005302899-A |
| titleOfInvention | Method for forming thin film pattern and method for forming magnetoresistive element |
| abstract | PROBLEM TO BE SOLVED: To provide a thin film pattern forming method capable of forming a thin film pattern having a minute dimension with higher accuracy. SOLUTION: Since a soluble layer 2 that continuously covers the entire periphery of the two-layer resist pattern 5 and the entire first thin film 17Z in a region other than the region covered by the two-layer resist pattern 5 is formed. It is possible to suppress the deformation of the two-layer resist pattern 5 during dry etching, and to reduce the amount of reattachment 9 attached. Therefore, the isolated first thin film pattern 17 having a minute dimension and defined by the contour 7 can be formed with higher accuracy. Further, after forming the first thin film pattern 17 by dry etching, the two-layer resist pattern 5 covered with the soluble layer 2 is formed using a solvent capable of dissolving both the two-layer resist pattern 5 and the soluble layer 2. Since it is removed, the first thin film pattern 17 and the two-layer resist pattern 5 can be separated without any trouble. [Selection] Figure 5 |
| priorityDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.