| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069302aee0d7eee291cd1e0ffa662781 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3342 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2004-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c5ae687458465236efd0f60ff0520da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcff564788b284b677a01c0a3319e19d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f39defeef5779a66bc5c4ee199f69935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eba0b1411e78298ce65b06aba26ce146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e94d1249962893c9450b9f7167e708a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6acf6128f6a88a212a317257488d015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_131b424126ce485e8a05e946b71a618b |
| publicationDate |
2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005260060-A |
| titleOfInvention |
Resist removing apparatus, resist removing method, and semiconductor device manufactured using the same |
| abstract |
PROBLEM TO BE SOLVED: To reduce the relative dielectric constant of a low dielectric constant insulating film and increase the resist removal speed in resist removal using hydrogen gas. A wafer 31 is placed on a turntable 22 in a chamber 21, a hydrogen mixed gas is introduced into a discharge tube 25 from a gas introduction port 32, and a μ wave 27 is introduced into the discharge tube 25 through a waveguide 28. Then, the mixed gas is plasma-excited to generate hydrogen active species. Then, neutral radicals (hydrogen radicals) of hydrogen atoms or hydrogen molecules are introduced into the chamber 21 from the gas transport pipe 23, and the resist mask on the surface of the wafer 31 is removed. Here, the temperature of the wafer 31 is set in the range of 200 ° C. to 400 ° C. by the substrate heating system 34 that heats the turntable 22 and controls the temperature. The processing gas after the resist removal is discharged out of the chamber 21 from the gas discharge port 33 by the exhaust system 30. .The |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100815939-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010505265-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009526399-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101364440-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006270004-A |
| priorityDate |
2004-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |